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Predictive Simulation of Semiconductor Processing 87 Die vorliegende Arbeit beschreibt daher

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Die vorliegende Arbeit beschreibt daher zunächst in Kapitel 2 die Probleme aus der [¿]

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Predictive Simulation of Semiconductor Processing 87 Die vorliegende Arbeit beschreibt daherPredictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in depth discussion of our current understanding of key

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